The use of nitrogen to disorder GaInP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1715139
Reference40 articles.
1. Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior
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3. Substrate‐driven ordering microstructure in GaxIn1−xP alloys
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1. Fundamental Aspects of MOVPE;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. Atomic ordering of AlInP grown by MOVPE at different temperatures in pure ambient N2;CrystEngComm;2009
3. Effects of dimethylhydrazine on Zn, C, and H doping of GaP;Journal of Crystal Growth;2008-05
4. Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy;Journal of Materials Science: Materials in Electronics;2007-11-22
5. The properties of GaInP/GaAs heterostructures as a function of growth temperature;Journal de Physique IV (Proceedings);2006-03
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