Conductive SiO<sub>2</sub>/HfO<sub>2</sub> distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters-Reference-Cited by-同舟云学术

Conductive SiO₂/HfO₂ distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters

Published:2022-01-31 Issue:4 Volume:131 Page:045301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cui Mei¹²,Guo Chenyu¹³,Yang Zhenhai¹⁴,Chen Li¹²,Dai Yijun¹²,Xu Houqiang¹²,Guo Wei¹²^ORCID,Ye Jichun¹²

Affiliation:

1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Institute of Nano Science and Technology, University of Science and Technology of China, Hefei 230026, China

4. Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, The University of Nottingham Ningbo China, Ningbo 315100, China

Funder

Youth Innovation Promotion Association

National Natural Science Foundation of China

Instrument Developing Project of the Chinese Academy of Sciences

Natural Science Foundation of Zhejiang Province

Science and Technology Innovation 2025 Major Project of Ningbo

Primary Research and Development Plan of Zhejiang Province

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0074868

Reference36 articles.

1. Integration of Self-Assembled Porous Alumina and Distributed Bragg Reflector for Light Trapping in Si Photovoltaic Devices

2. Optimized Optics for Highly Efficient Photovoltaic Devices

3. A surface-emitting laser incorporating a high-index-contrast subwavelength grating

4. Cavity designs for nitride VCSELs with dielectric DBRs operating efficiently at different temperatures

5. Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

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