Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365563
Reference24 articles.
1. Investigation of fast diffusing impurities in silicon by a transient ion drift method
2. Determination of the copper diffusion coefficient in silicon from transient ion-drift
3. Electronic effects of ion mobility in semiconductors: Semionic behaviour of CuInSe2
4. Self‐restoration of p‐n junctions in (Hg,Cd)Te
5. CuInSe2 for photovoltaic applications
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