Mesa waveguide GaAs/GaAlAs injection laser grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92180
Reference16 articles.
1. Preparation and properties of Ga<inf>1-x</inf>Al<inf>x</inf>As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
2. Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
3. Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition
4. Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices
5. Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current
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1. Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
2. A real-index guided InGaAlP visible laser diode with a small beam astigmatism;IEEE Journal of Quantum Electronics;1991-06
3. References;Thin Films by Chemical Vapour Deposition;1990
4. Filling of light emitting diode via-holes by MOCVD;Journal of Electronic Materials;1989-05
5. Metalorganic Chemical Vapor Deposition of Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
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