Damage to InP and InGaAsP surfaces resulting from CH4/H2reactive ion etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346758
Reference21 articles.
1. Dry etching induced damage on vertical sidewalls of GaAs channels
2. Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter Etching
3. Effects of ion species and adsorbed gas on dry etching induced damage in GaAs
4. Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structures
5. Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage
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2. Analysis of InP-based single photon avalanche diodes based on a single recess-etching process;Japanese Journal of Applied Physics;2018-03-09
3. Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry;Journal of Electronic Materials;2018-02-26
4. Design and fabrication of resonator quantum-well infrared photodetector with 10.2 μ m cutoff;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-09-21
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