Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819458
Reference16 articles.
1. A new three-terminal tunnel device
2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic
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5. Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
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3. Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT);Solid-State Electronics;2020-01
4. Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs);IEEE Access;2020
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