Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures-Reference-Cited by-同舟云学术

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Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Published:2014-11-24 Issue:21 Volume:105 Page:212405
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kamalakar M. Venkata¹,Dankert André¹,Bergsten Johan¹,Ive Tommy¹,Dash Saroj P.¹

Affiliation:

1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden

Funder

EU FP7 Marie Curie Career Integration grant

no Area of Advance program at Chalmers University of technology

Swedish Research Council Young Researcher Grant

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902814

Reference35 articles.

1. A roadmap for graphene

2. Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps

3. Electronic spin transport and spin precession in single graphene layers at room temperature

4. Tunneling Spin Injection into Single Layer Graphene

5. Spin transport and relaxation in graphene

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3. Van der Waals engineering toward designer spintronic heterostructures;Materials Today Electronics;2023-12

4. Revealing the improved stability of amorphous boron-nitride upon carbon doping;Nanoscale Horizons;2023

5. Investigation of the hexagonal boron nitride (h-BN) electronic and structural parameters and its dependency on the known semi-local functionals;Journal of Physics: Conference Series;2022-11-01

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