Room-temperature photoluminescence from Tb ions implanted in SiO2 on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368591
Reference21 articles.
1. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
2. Room‐temperature electroluminescence from Er‐doped crystalline Si
3. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
4. Electroluminescence of erbium–oxygen‐doped silicon diodes grown by molecular beam epitaxy
5. Erbium implanted thin film photonic materials
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