Orientation dependence of strained ZnSe/ZnS(h11) single quantum well luminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367185
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5. Influence of lattice relaxation on the properties of single quantum wells by MOVPE
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1. 7.1.6 Quantum wells and superlattices based on ZnSe and its alloys;Growth and Structuring;2013
2. Electronic and optical properties ofInAs∕InPquantum dots on InP(100) andInP(311)Bsubstrates: Theory and experiment;Physical Review B;2006-07-12
3. Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates;Journal of Physics: Condensed Matter;2002-11-20
4. Self-aggregation of InAs quantum dots on (N11) GaAs substrates;Thin Solid Films;1998-12
5. Localization and thermal escape of excitons in ultrathin ZnSe/ZnS single quantum wells linked to interfacial ZnSe quantum slabs;Journal of Applied Physics;1998-06
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