Raman line shape of the A1 longitudinal optical phonon in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1737792
Reference20 articles.
1. Influence of electron-phonon interaction on the optical properties of III nitride semiconductors
2. Microscopic modeling of high field transport in wide-bandgap materials
3. Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells
4. Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride
5. Direct imaging of impurity‐induced Raman scattering in GaN
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1. Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors;Applied Physics Express;2016-07-29
2. Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride;Applied Physics Letters;2015-12-28
3. Stress distribution of GaN layer grown on micro-pillar patterned GaN templates;Applied Physics Letters;2013-07
4. Observation of symmetrically decay of A1(longitudinal optical) mode in free-standing GaN bulk single crystal from Li3N flux method;Applied Physics Letters;2013-01-07
5. GaN: phonon self-energies, phonon line shifts and widths;New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors;2011
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