Optimum (Cs,O)/GaAs interface of negative‐electron‐affinity GaAs photocathodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346791
Reference16 articles.
1. Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces
2. Oxygen adsorption on Cs covered GaAs(110) surfaces
3. The influence of temperature on the oxidation of cesiated GaAs
4. Negative affinity 3–5 photocathodes: Their physics and technology
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1. Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization.;Journal of Materials Chemistry C;2021
2. [GaN(Mg)-Cs]:[O-Cs] model for the Negative Electron Affinity GaN (0001) surface;Optik;2016-10
3. High stability of negative electron affinity gallium arsenide photocathodes activated with Cs and NF3;Journal of Physics D: Applied Physics;2015-08-21
4. A study of the NEA photocathode activation technique on a [GaAs(Zn):Cs]: O-Cs model;SPIE Proceedings;2006-09-22
5. Interaction of Cs and O with GaAs() at the overlayer–substrate interface during negative electron affinity type activations;Surface Science;2003-03
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