Affiliation:
1. Department of Materials Science & Engineering and Research Institute of Advanced Materials, Seoul National University, 08826 Seoul, South Korea
Abstract
Amorphous materials have been used in a range of electronic and photonic applications, and the need for quantitative analytical techniques on their local structural information is growing. We present a comprehensive analysis of the atomic and electronic structures of an amorphous material, amorphous carbon (a-C), with scanning transmission electron microscopy (STEM)-derived techniques, four-dimensional STEM (4D-STEM), and STEM-electron energy loss spectroscopy (STEM-EELS). Each diffraction pattern of an a-C layer stack acquired via 4D-STEM is transformed into a reduced density function (RDF) and a radial variance profile (RVP) to retrieve the information on the atomic structures. Importantly, a machine-learning approach (preferably cluster analysis) separates distinct features in the EELS and RDF datasets; it also describes the spatial distributions of these features in the scanned regions. Consequently, we showed that the differences in the sp2/ sp3 ratio and the involvement of additional elements led to changes in the bond length. Furthermore, we identified the dominant types of medium-range ordering structures (diamond-like or graphite-like nano-crystals) by correlations among the EELS, RDF, and RVP data. The information obtained via STEM-EELS and 4D-STEM can be strongly correlated, leading to the comprehensive characterization of the a-C layer stack for a nanometer-scale area. This process can be used to investigate any amorphous material, thereby yielding comprehensive information regarding the origins of notable properties.
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Subject
Physics and Astronomy (miscellaneous)
Cited by
2 articles.
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