Conversion of p-type to n-type diamond by exposure to a deuterium plasma-Reference-Cited by-同舟云学术

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Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Published:2004-12-15 Issue:12 Volume:96 Page:7060-7065
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kalish R.,Saguy C.,Cytermann C.,Chevallier J.,Teukam Z.,Jomard F.,Kociniewski T.,Ballutaud D.,Butler J. E.,Baron C.,Deneuville A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1811777

Reference12 articles.

1. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

2. Growth and characterization of phosphorus doped n-type diamond thin films

3. Phosphorus-doped chemical vapor deposition of diamond

4. The search for donors in diamond

5. Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization of diamond with KBH4 additive under high pressure and high temperature conditions;Modern Physics Letters B;2020-04-13

2. Electronic structure and stability of hydrogen defects in diamond and boron doped diamond: A density functional theory study;Computational Materials Science;2014-06

3. Depletion of nitrogen‐vacancy color centers in diamond via hydrogen passivation;Applied Physics Letters;2012-02-13

4. Boron-deuterium complexes in diamond: How inhomogeneity leads to incorrect carrier type identification;Journal of Applied Physics;2011-08

5. Overcoming Bipolar Doping Difficulty in Wide Gap Semiconductors;Advanced Calculations for Defects in Materials;2011-06-18

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