Erratum: “Ultra-low reverse leakage in large area kilo-volt class β -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. 123, 243502 (2023)]-Reference-Cited by-同舟云学术

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Erratum: “Ultra-low reverse leakage in large area kilo-volt class β -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. 123, 243502 (2023)]

Published:2024-01-08 Issue:2 Volume:124 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Roy Saurav¹^ORCID,Kostroun Benjamin²^ORCID,Cooke Jacqueline³^ORCID,Liu Yizheng¹^ORCID,Bhattacharyya Arkka¹^ORCID,Peterson Carl¹^ORCID,Sensale-Rodriguez Berardi³^ORCID,Krishnamoorthy Sriram¹^ORCID

Affiliation:

1. Materials Department, University of California Santa Barbara 1 , Santa Barbara, California 93106, USA

2. Department of Physics, University of California Santa Barbara 2 , Santa Barbara, California 93106, USA

3. Electrical and Computer Engineering, The University of Utah 3 , Salt Lake City, Utah 84112, USA

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0192873/18290123/029901_1_5.0192873.pdf

Reference1 articles.

1. Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF;Appl. Phys. Lett.,2023

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