Technique to evaluate the diode ideality factor of light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3318285
Reference10 articles.
1. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
2. Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaNp-njunction diodes
3. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
4. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
5. Fundamentals of Solid State Electronics
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