Evidence for antipolar displacements in NaNbO3 thin films

Author:

Schneider Thorsten1ORCID,Cardoletti Juliette1ORCID,Ding Hui2ORCID,Zhang Mao-Hua1ORCID,Jiang Tianshu2ORCID,Major Márton1ORCID,Komissinskiy Philipp1ORCID,Molina-Luna Leopoldo2ORCID,Alff Lambert1ORCID

Affiliation:

1. Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt, Germany

2. Advanced Electron Microscopy (AEM) Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Strasse 2, 64287 Darmstadt, Germany

Abstract

An antipolar phase is confirmed for NaNbO3 thin films grown by pulsed laser deposition on SrTiO3 (100) substrates. Reciprocal space maps and transmission electron microscopy reveal the presence of characteristic 1/4 superlattice reflections, indicative of the antipolar displacement of Na and Nb-ions. Furthermore, x-ray diffraction unveils the presence of two different orientations of the same phase for thin films beyond a critical thickness of about 60 nm. This orientation change with increasing thickness can be explained as an extraordinary strain compensation mechanism, changing magnitude and sign of the strain at the same time. The polarization vs electric field behavior exposes a characteristic thickness dependence, with the antiferroelectric phase stabilized for very thin films and a field induced ferroelectric hysteresis for a film of 310 nm having a maximum polarization of 26.5  μC [Formula: see text], which is among the highest values reported for NaNbO3 thin films grown on SrTiO3 (100).

Funder

Hessisches Ministerium für Wissenschaft und Kunst

Horizon 2020 Framework Programme

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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