Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization-Reference-Cited by-同舟云学术

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Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization

Published:2022-01-10 Issue:2 Volume:120 Page:021602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kusaba A.¹^ORCID,Kangawa Y.¹^ORCID,Kuboyama T.²^ORCID,Oshiyama A.³^ORCID

Affiliation:

1. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

2. Computer Centre, Gakushuin University, Toshima-ku, Tokyo 171-8588, Japan

3. Institute of Materials and Systems for Sustainability, Nagoya University, Chikusa-ku, Nagoya 464-8601, Japan

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0078660

Reference39 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

4. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

5. High-power AlGaN/GaN HEMTs for Ka-band applications

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