Quantum effect in the accumulation layer on field‐induced photoluminescence of double‐barrier resonant tunneling structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105532
Reference14 articles.
1. Magnetic field investigations of resonant tunnelling devices grown by MOCVD
2. Magnetotransport studies of charge accumulation in an AlInAs/GaInAs tunneling structure
3. Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures
4. Magnetotunneling spectroscopy in a double-barrier heterostructure: Observation of incoherent resonant-tunneling processes
5. Resonant tunneling of electrons from quantized levels in the accumulation layer of double‐barrier heterostructures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Charge buildup effects in asymmetric p-type resonant tunneling diodes;Microelectronics Journal;2005-03
2. Anomalous photoluminescence behavior in GaAs/AlAs superlattice-like double-barrier diodes under bias;Journal of Applied Physics;2002
3. Photoluminescence Study of Resonant Tunneling Transistor with p+/n-Junction Gate;Japanese Journal of Applied Physics;2000-01-15
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