Self-assembled single-digit nanometer memory cells-Reference-Cited by-同舟云学术

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Self-assembled single-digit nanometer memory cells

Published:2018-08-06 Issue:6 Volume:113 Page:062404
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hong J.¹^ORCID,Dong K.²,Bokor J.³^ORCID,You L.¹^ORCID

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China

2. Department of Automation, China University of Geosciences, Wuhan 430074, People's Republic of China

3. EECS, University of California-Berkeley, Berkeley, California 94720, USA

Funder

National Science Foundation

National Natural Science Foundation of China

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5033972

Reference25 articles.

1. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

2. Tunneling between ferromagnetic films

3. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

4. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

5. Currents and torques in metallic magnetic multilayers

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1. Deterministic spin-orbit torque switching including the interplay between spin polarization and kagome plane in Mn3Sn;Physical Review B;2024-04-23

2. Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque;Engineering;2022-05

3. A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device;Advanced Intelligent Systems;2020-11-04

4. Demonstration of spin transfer torque (STT) magnetic recording;Applied Physics Letters;2019-06-17

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