Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4974221
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1. High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm
2. Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition
3. Quantum dot infrared photodetectors
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5. InAs self-assembled quantum-dot lasers grown on (100) InP
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1. InAs/GaAs SK quantum dots stacking: Impact of spacer layer on optical properties;Physica B: Condensed Matter;2024-10
2. Single-particle and collective excitations in quantum wires comprised of vertically stacked quantum dots: Finite magnetic field;Modern Physics Letters B;2020-12-23
3. Effect of spin–orbit coupling on the hot-electron energy relaxation in nanowires;International Journal of Modern Physics B;2020-11-13
4. Impact of an InxGa1–xAs Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces;ACS Applied Nano Materials;2018-07-17
5. Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots;Journal of Luminescence;2018-03
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