Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis-Reference-Cited by-同舟云学术

Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis

Published:2020-12-07 Issue:23 Volume:117 Page:232101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kaminska Agata¹²³^ORCID,Koronski Kamil¹^ORCID,Strak Pawel³^ORCID,Wierzbicka Aleksandra¹^ORCID,Sobanska Marta¹^ORCID,Klosek Kamil¹^ORCID,Nechaev Dmitrii V.⁴,Pankratov Vladimir⁵⁶^ORCID,Chernenko Kirill⁷,Krukowski Stanislaw³^ORCID,Zytkiewicz Zbigniew R.¹^ORCID

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland

2. Faculty of Mathematics and Natural Sciences, School of Exact Sciences, Cardinal Stefan Wyszynski University, Dewajtis 5, 01-815 Warsaw, Poland

3. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

4. Ioffe Physical-Technical Institute, RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

5. Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063 Riga, Latvia

6. National University of Science and Technology “MISiS,” Leninsky Prospekt 4, 119049 Moscow, Russia

7. MAX IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

Funder

Swedish Research Council

Ministry of Education and Science of the Russian Federation

Polish National Science Center

VINNOVA

Svenska Forskningsrådet Formas

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0027743

Reference49 articles.

1. Unusual properties of the fundamental band gap of InN

2. Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition

3. Recombination of free and bound excitons in GaN

4. AlN bandgap temperature dependence from its optical properties

5. Nitride Semiconductor Devices

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