cw Ar+laser annealing of optically active impurities in nitrogen‐implanted AlxGa1−xAs (x=0.58)-Reference-Cited by-同舟云学术

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cw Ar+laser annealing of optically active impurities in nitrogen‐implanted AlxGa1−xAs (x=0.58)

Published:1979-10-15 Issue:8 Volume:35 Page:633-636
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Makita Yunosuke,Yokota Masaki,Nojiri Hidetoshi,Tsurushima Toshio,Tanoue Hisao,Kanayama Toshihiko,Shimada Jun‐ichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.91233

Reference7 articles.

1. Composition‐ratio dependence of formation of bound states in nitrogen‐implanted AlxGa1−xAs

2. Composition‐ratio dependence of formation of bound states in nitrogen‐implanted AlxGa1−xAs

3. Observation ofinsituannealing in hot ion‐implantation of nitrogen into AlxGa1−xAs (x=0.53)

4. Optical absorption coefficient of (Al0.42Ga0.58)As

5. Photoluminescence excitation spectra of nitrogen‐implanted AlxGa1−xAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01

2. Laser Processing of Semiconductors;Laser Processing and Analysis of Materials;1983

3. Annealing of nitrogen‐implanted GaAs1−xPxby a swept line electron beam;Journal of Applied Physics;1980-08

4. DEFECTS IN LASER-PROCESSED SEMICONDUCTORS;Laser and Electron Beam Processing of Materials;1980

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