Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2-Reference-Cited by-同舟云学术

Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2

Published:2016-11-21 Issue:21 Volume:109 Page:213105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yin Lei¹²,Xu Kai¹²,Wen Yao¹²,Wang Zhenxing¹,Huang Yun¹²,Wang Feng¹²,Shifa Tofik Ahmed¹²,Cheng Ruiqing¹²,Ma He³,He Jun¹

Affiliation:

1. CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China

2. University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China

3. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua–Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4968808

Reference36 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. Single-Layer Transition Metal Dichalcogenide Nanosheet-Based Nanosensors for Rapid, Sensitive, and Multiplexed Detection of DNA

3. Graphene transistors

4. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

5. Ultrafast Carrier Dynamics in Graphite

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