Piezoelectric effects in (001)‐oriented double barrier resonant tunneling structures-Reference-Cited by-同舟云学术

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Piezoelectric effects in (001)‐oriented double barrier resonant tunneling structures

Published:1995-03-13 Issue:11 Volume:66 Page:1358-1360
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cong L.,Albrecht J. D.,Nathan M. I.,Ruden P. P.,Smith D. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113200

Reference10 articles.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions;Nano Research;2024-09-05

2. Pressure effect study on the I–V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement;Chinese Physics B;2010-04

3. Integration of GaAs/In0.1 Ga0.9 As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications;physica status solidi (a);2009-10-14

4. Research on double-barrier resonant tunneling effect based stress measurement methods;Sensors and Actuators A: Physical;2009-03

5. A Piezoresistive Microaccelerometer Based on Resonant Tunneling Heterostructures;Sensor Letters;2008-02-01

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