Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99966
Reference14 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity
3. Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering
4. Low threshold planar buried heterostructure lasers fabricated by impurity‐induced disordering
5. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition
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1. Pulsed-laser irradiation quantum well intermixing process in GaInAs/GaInAsP laser structures;Microelectronic Engineering;2000-05
2. Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
3. Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy;IEEE Photonics Technology Letters;1994-09
4. High‐performance diffusion disordered AlxGa1−xAs lasers via a self‐aligned process and conventional open‐tube annealing;Journal of Applied Physics;1993-02-15
5. Applications and challenges of OEIC technology: a report on the 1989 Hilton Head workshop;Journal of Lightwave Technology;1990-06
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