Carrier mobility as a function of carrier density in type-II InAs/GaSb superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3103281
Reference41 articles.
1. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
2. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
3. Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y
4. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
5. On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared
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