Characterization of a top‐illuminatedp‐i‐ndiode with an indium tin oxide contact
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101170
Reference5 articles.
1. Coplanar flip‐chip mounting technique for picosecond devices
2. 100 GHz bandwidth planar GaAs Schottky photodiode
3. Use of transparent indium tin oxide to form a highly efficient 20 GHz Schottky barrier photodiode
4. Indium tin oxide/GaAs photodiodes for millimetric-wave applications
5. Transparent conductors—A status review
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-speed Al/sub 0.2/Ga/sub 0.8/As/GaAs multi-quantum-well phototransistors with tunable spectral response;IEEE Electron Device Letters;1993-07
2. High frequency GaAs/Al0.25Ga0.75As heterojunction bipolar transistors with transparent indium-tin-oxide emitter contacts;Electronics Letters;1993
3. In0.53Ga0.47Asp‐i‐nphotodiodes with transparent cadmium tin oxide contacts;Applied Physics Letters;1992-10-05
4. 34 GHz Bandwidth GaAs High-Speed Schottky Barrier Photodiode Fabricated by Chemical-Beam Epitaxy;Japanese Journal of Applied Physics;1992-02-15
5. Efficient single-heterojunction Al/sub 0.27/Ga/sub 0.73/As/GaAs p-i-n photodiodes with 22-GHz bandwidths;IEEE Transactions on Electron Devices;1991
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