Theoretical study of the silicon–oxygen hydrides SiOHn(n=0–4) and SiOH+n(n=0–5): Dissociation energies, ionization energies, enthalpies of formation, and proton affinities-Reference-Cited by-同舟云学术

Theoretical study of the silicon–oxygen hydrides SiOHn(n=0–4) and SiOH+n(n=0–5): Dissociation energies, ionization energies, enthalpies of formation, and proton affinities

Published:1993-11 Issue:9 Volume:99 Page:6697-6703
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Lucas David J.,Curtiss Larry A.,Pople John A.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.465837

Reference71 articles.

1. Amorphous silicon‐silicon nitride thin‐film transistors

2. Indirect plasma deposition of silicon dioxide

3. Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition

4. A model for the discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon

5. Laser-induced fluorescence of the HSiF radical

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