Multibarrier heterostructure GaAs/AlAs switch
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369180
Reference15 articles.
1. New ultrafast switching mechanism in semiconductor heterostructures
2. Three‐terminal delta‐doped barrier switching device with S‐shaped negative differential resistance
3. S‐type switching characteristics from transverse transport in multiquantum well diodes
4. GaAs‐InGaAs double delta‐doped quantum‐well switching device prepared by molecular beam epitaxy
5. GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Giant suppression of avalanche noise in GaN double-drift impact diodes;Solid-State Electronics;2005-03
2. Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors;Japanese Journal of Applied Physics;1999-12-15
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