Highly sensitive phototransistor based on GaSe nanosheets-Reference-Cited by-同舟云学术

Highly sensitive phototransistor based on GaSe nanosheets

Published:2015-10-05 Issue:14 Volume:107 Page:143112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Hai¹²,Wang Peng¹²,Gao Yanqing¹²,Wang Xudong¹²,Lin Tie¹²^ORCID,Wang Jianlu¹²,Liao Lei³,Sun Jinglan¹²,Meng Xiangjian¹²,Huang Zhiming¹²,Chen Xiaoshuang¹²,Chu Junhao¹²

Affiliation:

1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China

2. University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China

3. Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of the Ministry of Education, Wuhan University, Wuhan 430072, China

Funder

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Shanghai (Shanghai Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4933034

Reference42 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy