Switching fluctuations and density limitations of pseudospin valve memory
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372931
Reference5 articles.
1. Switching field variation in patterned submicron magnetic film elements
2. The effect of end and edge shape on the performance of pseudo-spin valve memories
3. Pseudo spin valve MRAM cells with sub-micrometer critical dimension
4. End domain states and magnetization reversal in submicron magnetic structures
5. Dynamic switching characteristics of pseudo-spin valve memory elements
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1. Submicron patterning of Ta, NiFe, and Pac-man type Ta/NiFe/Ta magnetic elements;Korean Journal of Chemical Engineering;2005-09
2. Magnetization configuration and switching behavior of submicron NiFe elements: Pac-man shape;Applied Physics Letters;2003-07-14
3. Ordered magnetic nanostructures: fabrication and properties;Journal of Magnetism and Magnetic Materials;2003-01
4. Giant magnetoresistance and magnetic interactions in exchange-biased spin-valves;Handbook of Magnetic Materials;2003
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