Annealing and recrystallization of amorphous silicon carbide produced by ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368801
Reference28 articles.
1. Phys. Status Solidi A PSSABA162 (1997);
2. Phys. Status Solidi B PSSBBD202 (1997).
3. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
4. Ion Implantation and Annealing Effects in Silicon Carbide
5. Radiation damage and annealing behaviour of Ge+-implanted SiC
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