Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1604950
Reference35 articles.
1. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
5. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
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