Model describing phosphorus diffusion gettering of transition elements in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102968
Reference12 articles.
1. Kinetics of Phosphorus Predeposition in Silicon Using POCl3
2. Study of the enhanced solubility and lattice location of gold impurities in a heavily phosphorus−diffused layer of silicon
3. Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations
4. Monitoring of Internal Gettering during Bipolar Processes
5. HREM of SiP precipitates at the (111) silicon surface during phosphorus predeposition
Cited by 55 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Gettering in silicon photovoltaics: A review;Solar Energy Materials and Solar Cells;2022-01
2. N-type high-performance multicrystalline and mono-like silicon wafers with lifetimes above 2 ms;Japanese Journal of Applied Physics;2017-07-05
3. Coupled modeling of the competitive gettering of transition metals and impact on performance of lifetime sensitive devices;Journal of Applied Physics;2017-03-07
4. Comparison of POCl3 diffusion and phosphorus ion-implantation induced gettering in crystalline Si solar cells;Solar Energy Materials and Solar Cells;2016-12
5. Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing;Renewable and Sustainable Energy Reviews;2016-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3