Epitaxial lift-off of II–VI semiconductors from III–V substrates using a MgS release layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4859515
Reference22 articles.
1. High efficiency GaAs thin film solar cells by peeled film technology
2. Extreme selectivity in the lift‐off of epitaxial GaAs films
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe;Journal of Electronic Materials;2018-05-22
2. Stacking of ZnSe/ZnCdSe Multi-Quantum Wells on GaAs (100) by Epitaxial Lift-Off;Journal of Electronic Materials;2018-05-04
3. Molecular beam epitaxial growth of zinc blende MgS on GaAs (2 1 1)B substrates;Journal of Crystal Growth;2018-03
4. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer;Journal of Physics D: Applied Physics;2016-07-15
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