Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4740255
Reference18 articles.
1. Vertical-Si-Nanowire SONOS Memory for Ultrahigh-Density Application
2. Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection
3. Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics
4. Validation of Retention Modeling as a Trap-Profiling Technique for SiN-Based Charge-Trapping Memories
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1. Polaron formation in the hydrogenated amorphous silicon nitride Si3N4:H;Physical Review B;2024-07-01
2. Charge transport mechanism in the forming-free memristor based on silicon nitride;Scientific Reports;2021-01-28
3. Statistical Investigation of Anomalous Fast Erase Dynamics in Charge Trapping NAND Flash;IEEE Electron Device Letters;2013-04
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