Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3-Reference-Cited by-同舟云学术

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3

Author:

Sanchela Anup V.¹,Wei Mian²,Zensyo Haruki³,Feng Bin⁴^ORCID,Lee Joonhyuk⁵,Kim Gowoon⁵,Jeen Hyoungjeen⁵,Ikuhara Yuichi⁴,Ohta Hiromichi¹²^ORCID

Affiliation:

1. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan

2. Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan

3. School of Engineering, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan

4. Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan

5. Department of Physics, Pusan National University, Busan 46241, South Korea

Funder

Dynamic Alliance for open Innovation Bridging Human, Environment and Materials

Korea-Japan bilateral program, NRF

Nano Informatics, Japan Society for the Promotion Science

Scientific Research A, Japan Society for the Promotion Science, Asahi Glass Foundation and Mitsubishi Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference24 articles.

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