Ion beam syntheses and microstructure studies of a new FeSi2phase
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363240
Reference10 articles.
1. An optimally designed process for submicrometer MOSFET's
2. Strain relaxation in ultrathin epitaxial films of β-FeSi2 on unstrained and strained Si(100) surfaces
3. Ion beam synthesis of buried α‐FeSi2and β‐FeSi2layers
4. Epitaxial films of semiconducting FeSi2on (001) silicon
5. Electronic properties of semiconducting FeSi2films
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1. Controllable growth of α- and β-FeSi2thin films on Si(100) by facing-target sputtering;physica status solidi (a);2007-10
2. Growth of bulk single crystals -FeSi2 by chemical vapour deposition;Science in China Series G;2003
3. Formation of $\beta$-FeSi2 and the remanent $\alpha$-Fe;Journal of Physics: Condensed Matter;2002-05-17
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