Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2172287
Reference14 articles.
1. A 90-nm Logic Technology Featuring Strained-Silicon
2. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
3. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
4. Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
5. On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors
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