Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer-Reference-Cited by-同舟云学术

Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer

Published:2011-11-07 Issue:19 Volume:99 Page:193302
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wan Han Kyu,Ho Lee Min,Whan Kim Tae,Yeol Yun Dong,Woo Kim Sung,Wook Kim Sang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3659473

Reference25 articles.

1. Nonvolatile multiple-valued memory device using lateral spin valve

2. Floating-gate memory based on an organic metal-insulator-semiconductor capacitor

3. Organic heterostructure device with nonvolatile memory behavior using electrically doped layers

4. Charging phenomena in pentacene-gold nanoparticle memory device

5. Stable, three layered organic memory devices from C60 molecules and insulating polymers

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