Near ultraviolet enhanced 4H-SiC Schottky diode-Reference-Cited by-同舟云学术

Near ultraviolet enhanced 4H-SiC Schottky diode

Published:2019-12-23 Issue:26 Volume:115 Page:261101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shen Yang¹^ORCID,Jones Andrew H.¹,Yuan Yuan¹^ORCID,Zheng Jiyuan¹,Peng Yiwei¹,VanMil Brenda²,Olver Kimberley²,Sampath Anand V.²,Parker Cory³,Opila Elizabeth³,Campbell Joe C.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

2. Sensor and Electron Device Directorate, US Army Research Laboratory, Adelphi, Maryland 20783, USA

3. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5129375

Reference18 articles.

1. 4H-SiC visible blind UV avalanche photodiode

2. Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2° positive bevel

3. SiC devices for advanced power and high-temperature applications

4. High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes

5. 4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

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