A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface-Reference-Cited by-同舟云学术

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Published:2018-02-22 Issue:16 Volume:123 Page:161599
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Wu Kongping¹²,Liao Meiyong¹,Sang Liwen³,Liu Jiangwei¹,Imura Masataka¹^ORCID,Ye Haitao⁴^ORCID,Koide Yasuo⁵

Affiliation:

1. Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2. School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan, Anhui 232001, China

3. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

4. School of Engineering and Applied Science, Aston University, Birmingham B4 7ET, United Kingdom

5. Research Network and Facility Services Division, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Funder

China Scholarship Council

Excellent Young Talents Fund Program of Higher Education Institutions of Anhui Province

MEXT | Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference45 articles.

1. GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

2. Wide-bandgap semiconductor ultraviolet photodetectors

3. Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors

4. Influence of diamond crystal orientation on their tribological behaviour under various environments

5. Recent developments of wide-bandgap semiconductor based UV sensors

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural design and electronic performance at MO /diamond (M = Hf, Zr, Ti, Al, Sc, Y) interfaces for MOS device applications;Applied Surface Science;2025-01

2. The heterointerface characterization of BaF2 or MgF2 on the hydrogenated diamond by X-ray photoelectron spectroscopy;Materials Science in Semiconductor Processing;2024-08

3. A multiscale interfacial cyclic debonding model for fibre-reinforced composites using micromechanics and molecular dynamics;Composite Structures;2024-02

4. A comparative study of interfacial thermal conductance between metal and semiconductor;Scientific Reports;2022-11-19

5. Progress of structural and electronic properties of diamond: a mini review;Functional Diamond;2021-01-02