Transport through an impurity tunnel coupled to a Si/SiGe quantum dot-Reference-Cited by-同舟云学术

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Published:2015-09-07 Issue:10 Volume:107 Page:103112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Foote Ryan H.¹^ORCID,Ward Daniel R.¹,Prance J. R.²^ORCID,Gamble John King³,Nielsen Erik³,Thorgrimsson Brandur¹,Savage D. E.¹,Saraiva A. L.⁴^ORCID,Friesen Mark¹,Coppersmith S. N.¹,Eriksson M. A.¹

Affiliation:

1. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

2. Department of Physics, Lancaster University, Bailrigg, Lancaster LA1 4YB, United Kingdom

3. Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

4. Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, Brazil

Funder

National Science Foundation (NSF)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930909

Reference31 articles.

1. A silicon-based nuclear spin quantum computer

2. Solid-state quantum memory using the 31P nuclear spin

3. Electronic Spin Storage in an Electrically Readable Nuclear Spin Memory with a Lifetime >100 Seconds

4. A single-atom electron spin qubit in silicon

5. Electron spin coherence exceeding seconds in high-purity silicon

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