Polymerization of defect states at dislocation cores in InAs
Author:
Affiliation:
1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2. Department of Emerging Materials Science, DGIST, Daegu 711-873, South Korea
3. Beijing Computational Science Research Center, Beijing 100094, China
Funder
DGIST
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4940743
Reference26 articles.
1. Photoluminescence at Dislocations in GaAs
2. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
3. Effect of dislocations on the efficiency of thin‐film GaAs solar cells on Si substrates
4. Dislocations in strained-layer epitaxy: theory, experiment, and applications
5. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
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