Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature

Author:

Shirokura Takanori1ORCID,Hai Pham Nam12ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan

2. Center for Spintronics Research Network (CSRN), The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

Abstract

Half-Heusler alloy topological semimetal YPtBi is a promising candidate for an efficient spin source material having both large spin Hall angle θSH and high thermal stability. However, high-quality YPtBi thin films with low bulk carrier density are usually grown at 600 °C, which exceeds the limitation of 400 °C for back end of line (BEOL) process. Here, we investigate the crystallinity and spin Hall effect of YPtBi thin films grown at lower growth temperature down to 300 °C. Although both effective spin Hall angle and spin Hall conductivity degraded with lowering the growth temperature to 300 °C due to degradation of the interfacial spin transparency, they were recovered by reducing the sputtering Ar gas pressure. We achieved a giant θSH up to 7.8 and demonstrated efficient spin–orbit torque magnetization switching by ultralow current density of ∼105 A/cm2 in YPtBi grown at 300 °C with the Ar gas pressure of 1 Pa. Our results provide the recipe to achieve giant θSH in YPtBi grown at lower growth temperature suitable for BEOL process.

Funder

Kioxia Corporation

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3