Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells-Reference-Cited by-同舟云学术

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Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Published:2016-08-29 Issue:9 Volume:109 Page:091103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Chung-Yi¹,Huang Chih-Hsiung²,Huang Shih-Hsien²,Chang Chih-Chiang¹,Liu C. W.¹²³,Huang Yi-Chiau⁴,Chung Hua⁴,Chang Chorng-Ping⁴

Affiliation:

1. Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan

2. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

3. National Nano Device Labs, Hsinchu 30077, Taiwan

4. Applied Materials Inc., Sunnyvale, California 94085, USA

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4961939

Reference25 articles.

1. GeSn technology: Extending the Ge electronics roadmap

2. High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

3. Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

4. Achieving direct band gap in germanium through integration of Sn alloying and external strain

5. Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors

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1. SiGeSn Quantum Well for Photonics Integrated Circuits on Si Photonics Platform: A Review;Journal of Physics D: Applied Physics;2022-08-26

2. Influence of hydrostatic pressure and concentration of Ge on the topological band order of SnSi1-Ge alloys;Materials Science and Engineering: B;2022-07

3. Optical Gain Characteristics of BGaAs/GaP Quantum Wells;IEEE Photonics Journal;2020-08

4. Layout Study of Strained Ge-Based pMOSFETs Integrated With S/D GeSn Alloy and CESL by Using Process-Oriented Stress Simulations;IEEE Transactions on Electron Devices;2018-11

5. Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement;Nanotechnology;2018-09-20

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