Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair-Reference-Cited by-同舟云学术

Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair

Published:2015-03-16 Issue:11 Volume:106 Page:111604
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Xiaohong¹,Xu Hongmei¹,Lin Na¹²,Xu Fuchun¹,Chen Hangyang¹,Cai Duanjun¹³,Kang Junyong¹

Affiliation:

1. Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China

2. Xiamen Industrial & Commercial School, Jimei district, Xiamen 361024, China

3. Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, 1, Roosevelt Road, Section 4, Taipei 10617, Taiwan

Funder

863 program of china

973 programs of china

FRFCU

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914183

Reference36 articles.

1. Quantum confinement in semiconductor heterostructure nanometer-size particles

2. Quantum Theory of the Optical and Electronic Properties of Semiconductors

3. Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths

4. Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wells

5. Atomic Scale Structure and Chemical Composition across Order-Disorder Interfaces

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