Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123095
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1. Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide
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3. Off-state instabilities in thermally nitrided-oxide n-MOSFETs
4. Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique
5. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
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