High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p–i–n photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1756208
Reference20 articles.
1. Ultrawide-band/high-frequency photodetectors
2. InGaAs-based high-performance p-i-n photodiodes
3. Influence of growth temperatures on the photoresponse of low temperature grown GaAs:As p-i-n diodes
4. 1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)
5. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
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