Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103131
Reference5 articles.
1. Control of the Schottky barrier using an ultrathin interface metal layer
2. Barrier height change of Pt/Cr/n-GaAs Schottky contacts due to heat treatments
3. n-GaAs Schottky diodes metallized with Ti and Pt/Ti
4. Ohmic contacts to GaAs
5. Doped Oxides as Diffusion Sources
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4. STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY;Modern Physics Letters B;2006-12-10
5. Recent advances in Schottky barrier concepts;Materials Science and Engineering: R: Reports;2001-11
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